transistor (pnp) features high voltage maximum ratings ( t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -400 v v ceo collector-emitter voltage -400 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.2 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v (br) cbo i c = -100 a, i e =0 -400 v collector-emitter breakdown voltage v (br) ceo i c = -1ma,i b =0 -400 v emitter-base breakdown voltage v (br) ebo i e =-100 a,i c =0 -5 v collector cut-off current i cbo v cb =-400v, i e =0 -0.1 a collector cut-off current i ceo v ce =-400v, i b =0 -5 a emitter cut-off current i ebo v eb = -4v, i c =0 -0.1 a h fe(1) v ce =-10v, i c =-10ma 80 300 h fe(2) v ce =-10v, i c =-1ma 70 h fe(3) v ce =-10v, i c =-100ma 60 dc current gain h fe(4) v ce =-10v, i c =-50ma 80 v ce (sat) i c =-10ma, i b =-1ma -0.2 v collector-emitter saturation voltage v ce (sat) i c =-50ma, i b =-5ma -0.3 v base-emitter saturation voltage v be (sat) i c =-10ma, i b = -1ma -0.75 v transition frequency f t v ce =-20v, i c =-10ma f =30mhz 50 mhz sot-89 -3l 1. base 2. collector 3. emitter 1 2 3 A94 1 date:2011/05 www.htsemi.com semiconductor jinyu
-0 -4 -8 -12 -16 -20 -0 -2 -4 -6 -8 -10 -12 -14 0 25 50 75 100 125 150 0 100 200 300 400 500 600 -10 -100 100 -1 -10 -100 -1000 -1 -10 -100 10 100 -0.1 -1 -10 1 10 100 -1 -10 -100 -200 -400 -600 -800 -1000 -1 -10 -100 common emitter t a =25 -100ua -90ua -80ua -70ua -60ua -50ua -40ua -30ua -20ua i b =-10ua collector current i c (ma) collector-emitter voltage v ce (v) static characteristic ambient temperature t a ( ) collector power dissipation p c (mw) p c ?? t a -30 common emitter v ce = -20v t a =25 collector current i c (ma) transition frequency f t (mhz) -3 -200 f t ?? =10 i c v besat ?? t a =25 t a =100 base-emitter saturation voltage v besat (mv) collector current i c (ma) -100 500 -200 i c i c common emitter v ce = -10v t a =100 t a =25 collector current i c (ma) dc current gain h fe -30 -3 -0.3 -3 -0.03 -30 -3 -30 -3 -300 -30 -3 300 30 30 10 -3 -0.3 3 30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? capacitance c (pf) reverse voltage v (v) c ib c ob 300 -20 -200 -10 -1 -0.1 -0.01 A94 typical characteristics h fe ?? =10 i c v cesat ?? t a =100 t a =25 collector current i c (ma) collector-emitter saturation voltage v cesat (v) common emitter v ce =-10v collector current i c (ma) t a = 2 5 t a = 1 0 0 base-emmiter voltage v be (mv) -200 i c ?? v be 2 date:2011/05 www.htsemi.com semiconductor jinyu
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